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mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mw7ic2040n wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 mhz. this multi - stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation formats. ? typical single - carrier w - cdma performance: v dd = 28 volts, i dq1 = 130 ma, i dq2 = 330 ma, p out = 4 watts avg., f = 1932.5, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. power gain ? 32 db power added efficiency ? 17.5% acpr @ 5 mhz offset ? - 50 dbc in 3.84 mhz bandwidth ? capable of handling 5:1 vswr, @ 32 vdc, 1960 mhz, 50 watts cw output power (3 db input overdrive from rated p out ) ? stable into a 3:1 vswr. all spurs below - 60 dbc @ 100 mw to 40 watts cw p out . ? typical p out @ 1 db compression point 30 watts cw gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq1 = 90 ma, i dq2 = 430 ma, p out = 16 watts avg., 1805 - 1880 mhz power gain ? 33 db power added efficiency ? 35% spectral regrowth @ 400 khz offset = - 62 dbc spectral regrowth @ 600 khz offset = - 77 dbc evm ? 1.5% rms gsm application ? typical gsm performance: v dd = 28 volts, i dq1 = 90 ma, i dq2 = 430 ma, p out = 40 watts cw, 1805 - 1880 mhz and 1930 - 1990 mhz power gain ? 31 db power added efficiency ? 50% features ? characterized with series equivalent large - signal impedance parameters and common source s - parameters ? on - chip matching (50 ohm input, dc blocked, >3 ohm output) ? integrated quiescent current temperature compensation with enable/ disable function (1) ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. 1. refer to an1977, quiescent current thermal tracking circuit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www .freescale.com/rf. select documentation/application notes - an1977 or an1987. document number: mw7ic2040n rev. 1, 11/2009 freescale semiconductor technical data mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 1930 - 1990 mhz, 1805 - 1880 mhz, 4 w avg., 28 v single w - cdma, gsm edge, gsm rf ldmos wideband integrated power amplifiers case 1886 - 01 to - 270 wb - 16 plastic mw7ic2040nr1 case 1887 - 01 to - 270 wb - 16 gull plastic MW7IC2040GNR1 case 1329 - 09 to - 272 wb - 16 plastic mw7ic2040nbr1 figure 1. functional block diagram quiescent current temperature compensation (1) v ds1 rf in v gs1 rf out /v ds2 v gs2 v ds1 (top view) gnd nc rf in v gs1 gnd v ds1 rf out /v ds2 gnd v gs2 v ds1 gnd 2 3 4 5 6 7 8 16 15 14 13 12 9 10 11 1 v gs2 v gs1 nc nc nc figure 2. pin connections note: exposed backside of the package is the source terminal for the transistors. ? freescale semiconductor, inc., 2009. all rights reserved.
2 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 25 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case w - cdma (p out = 4 w avg., case temperature = 73 c) stage 1, 28 vdc, i dq1 = 130 ma stage 2, 28 vdc, i dq2 = 330 ma gsm edge (p out = 16 w avg., case temperature = 76 c) stage 1, 28 vdc, i dq1 = 130 ma stage 2, 28 vdc, i dq2 = 330 ma gsm (p out = 40 w avg., case temperature = 79 c) stage 1, 28 vdc, i dq1 = 130 ma stage 2, 28 vdc, i dq2 = 330 ma r jc 4.0 1.5 4.1 1.4 3.9 1.3 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 1.5 vdc, v ds = 0 vdc) i gss ? ? 1 adc stage 1 ? on characteristics gate threshold voltage (v ds = 10 vdc, i d = 25 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds = 28 vdc, i dq1 = 130 madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (v dd = 28 vdc, i dq1 = 130 madc, measured in functional test) v gg(q) 13 14.5 16 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. (continued)
mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 ? off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 1.5 vdc, v ds = 0 vdc) i gss ? ? 1 adc stage 2 ? on characteristics gate threshold voltage (v ds = 10 vdc, i d = 140 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds = 28 vdc, i dq2 = 330 madc) v gs(q) ? 2.8 ? vdc fixture gate quiescent voltage (v dd = 28 vdc, i dq2 = 330 madc, measured in functional test) v gg(q) 7 8 9 vdc drain - source on - voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) 0.2 0.39 1.2 vdc stage 2 ? dynamic characteristics (1) output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 246 ? pf functional tests (3) (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 130 ma, i dq2 = 330 ma, p out = 4 w avg., f = 1932.5 mhz, single - carrier w - cdma, 3gpp test model 1, 64 dpch, 45.2% clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. power gain g ps 29.5 32 34.5 db power added efficiency pae 16 17.5 ? % adjacent channel power ratio acpr ? -50 -46 dbc input return loss irl ? -15 -8 db typical performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 130 ma, i dq2 = 330 ma, 1930 - 1990 mhz p out @ 1 db compression point, cw p1db ? 30 ? w imd symmetry @ 22 w pep, p out where imd third order intermodulation 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 60 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 65 ? mhz quiescent current accuracy over temperature (2) with 5.6 k gate feed resistors ( - 30 to 85 c) i qt ? 3 ? % gain flatness in 60 mhz bandwidth @ p out = 4 w avg. g f ? 1.2 ? db average deviation from linear phase in 60 mhz bandwidth @ p out = 30 w cw ? 0.5 ? average group delay @ p out = 30 w cw, f = 1960 mhz delay ? 2.5 ? ns part - to - part insertion phase variation @ p out = 30 w cw, f = 1960 mhz, six sigma window ? ? 33 ? gain variation over temperature (-30 c to +85 c) g ? 0.029 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.003 ? dbm/ c 1. part internally matched both on input and output. 2. refer to an1977, quiescent current thermal tracking circuit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes - an1977 or an1987. 3. measurement made with device in straight lead configuration before any lead forming operation is applied. (continued)
4 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical w - cdma performance ? 1800 mhz (in freescale w - cdma 1805 - 1880 mhz test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 130 ma, i dq2 = 330 ma, p out = 4 w avg., 1805 - 1880 mhz, single - carrier w - cdma, 3gpp test model 1, 64 dpch, 45.2% clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. power gain g ps ? 33.5 ? db power added efficiency pae ? 16.5 ? % adjacent channel power ratio acpr ? -50 ? dbc input return loss irl ? -6 ? db typical gsm edge performance ? 1800 mhz (in freescale gsm edge 1805 - 1880 mhz test fixture, 50 ohm system) v dd = 28 vdc, p out = 16 w avg., i dq1 = 90 ma, i dq2 = 430 ma, 1805 - 1880 mhz edge modulation power gain g ps ? 33 ? db power added efficiency pae ? 35 ? % error vector magnitude evm ? 1.5 ? % rms spectral regrowth at 400 khz offset sr1 ? -62 ? dbc spectral regrowth at 600 khz offset sr2 ? -77 ? dbc typical gsm edge performance ? 1900 mhz (in freescale gsm edge 1930 - 1990 mhz test fixture, 50 ohm system) v dd = 28 vdc, p out = 16 w avg., i dq1 = 90 ma, i dq2 = 430 ma, 1930 - 1990 mhz edge modulation power gain g ps ? 30 ? db power added efficiency pae ? 33 ? % error vector magnitude evm ? 1.5 ? % rms spectral regrowth at 400 khz offset sr1 ? -62 ? dbc spectral regrowth at 600 khz offset sr2 ? -80 ? dbc typical cw performance (in freescale gsm edge 1930 - 1990 mhz test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 90 ma, i dq2 = 430 ma, p out = 40 w cw, 1805 - 1880 mhz and 1930 - 1990 mhz power gain g ps ? 31 ? db power added efficiency pae ? 50 ? % input return loss irl ? -15 ? db p out @ 1 db compression point p1db ? 45 ? w
mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 5 rf device data freescale semiconductor z10 0.3419 x 0.1725 microstrip z11 0.3419 x 0.4671 microstrip z12 0.0830 x 0.4220 microstrip z13, z14 0.0830 x 0.2855 microstrip z15 0.0830 x 0.9030 microstrip z16 0.0830 x 0.2499 microstrip pcb rogers ro4350, 0.030 , r = 3.5 z1 0.0826 x 0.5043 microstrip z2 0.0826 x 0.3639 microstrip z3 0.0826 x 0.4258 microstrip z4 0.0826 x 0.3639 microstrip z5 0.0826 x 0.3060 microstrip z6 0.0826 x 0.9290 microstrip z7 0.0600 x 0.1273 microstrip z8, z9 0.0800 x 1.3684 microstrip figure 3. mw7ic2040nr1(gnr1)(nbr1) test circuit schematic ? 1930 - 1990 mhz r1 rf input v gg1 z10 rf output c5 c3 v dd2 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 dut z6 c1 v dd1 z8 quiescent current temperature compensation z1 z9 z11 z12 c11 v gg2 c12 c10 c2 z15 c17 c6 c13 + c4 c18 c8 c9 z7 c14 r2 c16 c15 z16 z13 c7 z14 z2 z3 z4 z5 nc nc g1 g2 nc nc g2 g1 table 6. mw7ic2040nr1(gnr1)(nbr1) test circuit component designations and values ? 1930 - 1990 mhz part description part number manufacturer c1, c2, c3, c4, c5 6.8 pf chip capacitors atc100b6r8ct500xt atc c6, c7, c8, c9, c10, c11 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c12 2.2 f, 16 v chip capacitor c1206c225k4rac kemet c13 470 f, 63 v electrolytic capacitor, radial mcgpr63v477m13x26 - rh multicomp c14, c16 0.8 pf chip capacitors atc100b0r8bt500xt atc c15 1 pf chip capacitor atc100b1r0bt500xt atc c17, c18 1 f, 50 v chip capacitors grm21br71h105ka12l murata r1, r2 5.6 k , 1/4 w chip resistors crcw12065601fkea vishay
6 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 figure 4. mw7ic2040nr1(gnr1)(nbr1) test circuit component layout ? 1930 - 1990 mhz cut out area c14 r1 r2 c12 c10 c2 c1 c11 c4 c18 c8 c9 c16 c15 c5 c6 c7 c13 c3 c17 mw7ic2040n rev. 2 to272wb?16
mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 7 rf device data freescale semiconductor typical characteristics irl, input return loss (db) 1880 irl g ps acpr f, frequency (mhz) figure 5. single carrier w - cdma broadband performance @ p out = 4 watts avg. ?18 ?10 ?12 ?14 ?16 27 37 36 35 ?52 18 17 16 15 ?47 ?48 ?49 ?50 pae, power added efficiency (%) g ps , power gain (db) 34 33 32 31 30 29 1900 1920 1940 1960 1980 2000 2020 2040 14 ?51 ?20 acpr (dbc) figure 6. power gain versus output power @ i dq1 = 130 ma 29 35 1 p out , output power (watts) cw v dd = 28 vdc i dq1 = 130 ma f = 1960 mhz 33 32 31 10 50 g ps , power gain (db) 34 i dq2 = 495 ma 248 ma 28 30 165 ma 330 ma 413 ma pae v dd = 28 vdc, p out = 4 w (avg.), i dq1 = 130 ma i dq2 = 330 ma, single?carrier w?cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability on ccdf figure 7. power gain versus output power @ i dq2 = 330 ma 28 35 1 p out , output power (watts) cw v dd = 28 vdc i dq2 = 330 ma f = 1960 mhz 33 32 31 10 50 g ps , power gain (db) 34 i dq1 = 195 ma 30 65 ma 163 ma 29 98 ma 80 ma figure 8. intermodulation distortion products versus two - tone spacing two?tone spacing (mhz) 10 ?60 ?10 ?20 ?30 ?50 1 100 imd, intermodulation distortion (dbc) ?40 im3?u im3?l im5?u im5?l im7?l im7?u v dd = 28 vdc, p out = 22 w (pep), i dq1 = 130 ma i dq2 = 330 ma, two?tone measurements (f1 + f2)/2 = center frequency of 1960 mhz
8 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 typical characteristics figure 9. power gain, acpr and power added efficiency versus output power 34 p out , output power (watts) 32 30 28 8 33 31 29 1 16 24 40 5 65 55 45 35 25 15 pae, power added efficiency (%) 32 v dd = 28 vdc, i dq1 = 130 ma, i dq2 = 330 ma, f = 1960 mhz single?carrier w?cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probability on ccdf acpr acpr (dbc) ?70 ?10 ?20 ?30 ?50 ?40 ?60 g ps , power gain (db) g ps figure 10. single - carrier w - cdma power gain, power added efficiency and acpr versus output power pae 40 p out , output power (watts) avg. 36 32 28 38 34 30 1 10 60 5 50 45 40 35 25 15 pae, power added efficiency (%) v dd = 28 vdc, i dq1 = 130 ma i dq2 = 330 ma, f = 1960 mhz acpr acpr (dbc) ?64 ?10 ?34 ?40 ?52 ?46 ?58 g ps , power gain (db) g ps 22 24 26 10 20 30 t c = ?30 c 85 c 25 c ?30 c 25 c 85 c ?30 c pae single?carrier w?cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability on ccdf figure 11. broadband frequency response 15 40 1400 f, frequency (mhz) 30 25 1500 gain (db) 35 gain 1600 1700 1800 1900 2000 2300 2400 irl ?20 0 ?4 ?8 ?12 ?16 irl (db) 20 v dd = 28 vdc p out = 25 dbm i dq1 = 130 ma i dq2 = 330 ma 2100 2200 ?28 ?22 ?16
mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 9 rf device data freescale semiconductor typical characteristics 250 10 9 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 4 w avg., and pae = 17.5%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 5 10 8 1st stage 2nd stage w - cdma test signal 0.0001 100 0 peak?to?average (db) figure 13. ccdf w - cdma 3gpp, test model 1, 64 dpch, 45.2% clipping, single - carrier test signal 10 1 0.1 0.01 0.001 24 6 8 probability (%) w?cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. input signal par = 7.5 db @ 0.01% probability on ccdf input signal 10 13579 ?60 ?100 10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 ?1.8 ?3.6 ?5.4 ?9 9 f, frequency (mhz) figure 14. single - carrier w - cdma spectrum ?7.2 ?acpr in 3.84 mhz integrated bw +acpr in 3.84 mhz integrated bw ?10 0
10 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 z o = 50 f = 2040 mhz f = 1880 mhz z in z o = 10 z load f = 2040 mhz f = 1880 mhz v dd = 28 vdc, i dq1 = 130 ma, i dq2 = 330 ma, p out = 4 w avg. f mhz z in z load 1880 42.97 - j25.07 6.10 - j5.01 1900 44.01 - j25.91 5.92 - j4.71 1920 45.14 - j26.72 5.76 - j4.44 1940 46.38 - j27.48 5.62 - j4.21 1960 47.71 - j28.19 5.51 - j4.01 1980 49.16 - j28.83 5.40 - j3.83 2000 50.71 - j29.40 5.27 - j3.71 2020 52.36 - j29.87 5.13 - j3.60 2040 54.12 - j30.23 4.99 - j3.52 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent input and load impedance z in z load device under test output matching network
mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 11 rf device data freescale semiconductor alternative peak tune load pull characteristics 17 p3db = 47.74 dbm (59 w) p in , input power (dbm) 46 43 18 21 actual ideal p1db = 47.06 dbm (51 w) 47 45 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 48 49 50 53 16 15 14 13 12 11 v dd = 28 vdc, i dq1 = 130 ma, i dq2 = 330 ma pulsed cw, 10 sec(on), 10% duty cycle, f = 1930 mhz 44 51 52 19 20 test impedances per compression level z source z load p1db 49.30 + j8.40 3.60 - j4.50 figure 16. pulsed cw output power versus input power @ 28 v @ 1930 mhz 17 p3db = 47.88 dbm (61 w) p in , input power (dbm) 46 18 23 actual ideal p1db = 47.37 dbm (55 w) 47 45 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 48 49 50 53 16 13 v dd = 28 vdc, i dq1 = 130 ma, i dq2 = 330 ma pulsed cw, 10 sec(on), 10% duty cycle, f = 1990 mhz 51 44 43 15 14 52 19 20 21 22 test impedances per compression level z source z load p1db 50.0 - j4.90 3.40 - j5.10 figure 17. pulsed cw output power versus input power @ 28 v @ 1990 mhz
12 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 table 7. common source s - parameters (v dd = 28 v, i dq1 = 90 ma, i dq2 = 430 ma, t c = 25 c, 50 ohm system) f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 1500 0.595 - 118.5 2.110 - 151.3 0.00174 - 71.2 0.888 - 160.3 1550 0.545 - 147.4 3.851 178.9 0.00192 - 86.7 0.876 170.4 1600 0.482 - 176.5 7.415 144.7 0.00294 - 114.0 0.867 137.1 1650 0.398 156.7 15.620 103.6 0.00445 - 149.9 0.872 94.6 1700 0.332 146.1 37.544 45.5 0.00746 177.5 0.884 29.4 1750 0.542 116.5 62.685 - 48.6 0.00940 110.9 0.650 - 93.8 1800 0.488 59.6 50.513 - 124.5 0.00642 67.4 0.454 157.6 1850 0.373 8.7 42.562 - 178.8 0.00497 40.5 0.419 105.4 1900 0.294 - 46.7 38.690 132.3 0.00438 19.1 0.416 75.9 1950 0.269 - 107.0 36.138 85.3 0.00416 - 7.3 0.443 54.0 2000 0.297 - 161.3 33.838 39.7 0.00382 - 28.5 0.497 31.7 2050 0.342 154.0 32.122 - 4.7 0.00350 - 50.7 0.553 8.0 2100 0.389 114.8 30.682 - 48.5 0.00342 - 69.9 0.602 - 16.3 2150 0.420 78.2 29.594 - 92.4 0.00354 - 84.6 0.640 - 41.0 2200 0.424 41.2 28.734 - 137.7 0.00396 - 101.3 0.666 - 65.4 2250 0.388 2.9 27.277 175.2 0.00425 - 125.1 0.689 - 89.2 2300 0.302 - 37.2 24.568 126.4 0.00483 - 153.1 0.720 - 113.5 2350 0.188 - 78.8 20.404 78.5 0.00470 174.4 0.753 - 138.7 2400 0.066 - 123.6 16.281 33.8 0.00415 148.7 0.778 - 163.6 2450 0.034 55.1 12.661 - 8.6 0.00388 124.4 0.806 171.0 2500 0.104 12.1 9.738 - 48.2 0.00368 106.5 0.826 145.2 2550 0.154 - 17.7 7.577 - 85.7 0.00328 77.5 0.842 119.7 2600 0.191 - 44.6 5.905 - 121.7 0.00281 57.2 0.851 94.4 2700 0.250 - 94.4 3.679 169.8 0.00245 37.8 0.856 45.7 2750 0.278 - 118.4 2.921 136.7 0.00271 19.5 0.854 22.1 2800 0.309 - 142.0 2.330 104.5 0.00373 2.2 0.854 - 0.5 2850 0.343 - 165.3 1.874 72.7 0.00250 - 19.6 0.849 - 23.5 2900 0.382 171.0 1.518 41.5 0.00286 - 40.7 0.851 - 46.0 2950 0.420 147.7 1.226 10.6 0.00313 - 71.3 0.850 - 68.4 3000 0.459 124.6 0.985 - 19.8 0.00262 - 98.0 0.851 - 91.1 3050 0.498 102.9 0.782 - 49.0 0.00101 - 108.5 0.847 - 113.4 3100 0.542 79.6 0.641 - 76.9 0.00279 - 84.9 0.850 - 136.3 3150 0.577 56.4 0.531 - 105.1 0.00504 - 110.7 0.856 - 159.8 3200 0.603 33.6 0.439 - 133.3 0.00526 - 152.0 0.857 176.4 3250 0.628 11.0 0.363 - 161.1 0.00587 - 176.6 0.858 152.0 3300 0.654 - 11.9 0.303 171.0 0.00659 160.1 0.857 126.8 3350 0.661 - 35.4 0.250 143.7 0.00909 129.6 0.853 101.4 3400 0.678 - 57.0 0.208 115.4 0.00691 98.1 0.845 74.5 3450 0.692 - 80.2 0.157 88.5 0.00718 80.9 0.745 42.1 3500 0.704 - 103.7 0.158 71.5 0.01000 46.8 0.760 43.7
mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 13 rf device data freescale semiconductor w - cdma ? 1805 - 1880 mhz z8, z9 0.0800 x 1.1139 microstrip z10 0.3419 x 0.1725 microstrip z11 0.3419 x 0.4671 microstrip z12 0.0830 x 0.4220 microstrip z13 0.0830 x 0.9030 microstrip z14 0.0830 x 0.2499 microstrip pcb rogers ro4350, 0.030 , r = 3.5 z1 0.0826 x 0.5043 microstrip z2 0.0826 x 0.3639 microstrip z3 0.0826 x 0.4258 microstrip z4 0.0826 x 0.3639 microstrip z5 0.0826 x 0.3459 microstrip z6 0.0826 x 0.9115 microstrip z7 0.0600 x 0.1273 microstrip figure 18. mw7ic2040nr1(gnr1)(nbr1) test circuit schematic ? 1805 - 1880 mhz r1 rf input v gg1 z10 rf output c5 c3 v dd2 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 dut z6 c1 v dd1 z8 quiescent current temperature compensation z1 z9 z11 z12 c11 v gg2 c12 c10 c2 z13 c6 c13 + c4 c8 c9 z7 c14 r2 c16 z14 c7 z2 z3 z4 z5 nc nc g1 g2 nc nc g2 g1 c15 table 8. mw7ic2040nr1(gnr1)(nbr1) test circuit component designations and values ? 1805 - 1880 mhz part description part number manufacturer c1, c2, c3, c4, c5 6.8 pf chip capacitors atc100b6r8ct500xt atc c6, c7, c8, c9, c10, c11 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c12 2.2 f, 16 v chip capacitor c1206c225k4rac kemet c13 470 f, 63 v electrolytic capacitor, radial mcgpr63v477m13x26 - rh multicomp c14, c15, c16 1 pf chip capacitors atc100b1r0bt500xt atc r1, r2 5.6 k , 1/4 w chip resistors crcw12065601fkea vishay
14 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 w - cdma ? 1805 - 1880 mhz figure 19. mw7ic2040nr1(gnr1)(nbr1) test circuit component layout ? 1805 - 1880 mhz cut out area c14 r1 r2 c12 c10 c2 c1 c11 c4 c8 c9 c16 c15 c5 c6 c7 c13 c3 mw7ic2040n rev. 2 to272wb?16
mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 15 rf device data freescale semiconductor gsm edge ? 1805 - 1880 mhz z8, z9 0.0800 x 1.3354 microstrip z10 0.3419 x 0.1725 microstrip z11 0.3419 x 0.4671 microstrip z12 0.0830 x 0.3575 microstrip z13 0.0830 x 0.9675 microstrip z14 0.0830 x 0.2499 microstrip pcb rogers ro4350, 0.030 , r = 3.5 z1 0.0826 x 0.5043 microstrip z2 0.0826 x 0.3639 microstrip z3 0.0826 x 0.4258 microstrip z4 0.0826 x 0.2315 microstrip z5 0.0826 x 0.1324 microstrip z6 0.0826 x 1.2574 microstrip z7 0.0600 x 0.1273 microstrip figure 20. mw7ic2040nr1(gnr1)(nbr1) test circuit schematic ? 1805 - 1880 mhz r1 rf input v gg1 z10 rf output c5 c3 v dd2 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 dut z6 c1 v dd1 z8 quiescent current temperature compensation z1 z9 z11 z12 c11 v gg2 c12 c10 c2 z13 c6 c13 + c4 c8 c9 z7 c14 r2 c16 z14 c7 z2 z3 z4 nc nc g1 g2 nc nc g2 g1 z5 c15 table 9. mw7ic 2040nr1(gnr1)(nbr1) test circuit com ponent designations and values ? 1805 - 1880 mhz part description part number manufacturer c1, c2, c3, c4, c5 6.8 pf chip capacitors atc100b6r8ct500xt atc c6, c7, c8, c9, c10, c11 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c12 2.2 f, 16 v chip capacitor c1206c225k4rac kemet c13 470 f, 63 v electrolytic capacitor, radial mcgpr63v477m13x26 - rh multicomp c14 0.8 pf chip capacitor atc100b0r8bt500xt atc c15 1 pf chip capacitor atc100b1r0bt500xt atc c16 1.2 pf chip capacitor atc100b1r2bt500xt atc r1, r2 5.6 k , 1/4 w chip resistors crcw12065601fkea vishay
16 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 gsm edge ? 1805 - 1880 mhz figure 21. mw7ic2040nr1(gnr1)(nbr1) test circuit component layout ? 1805 - 1880 mhz cut out area c14 r1 r2 c12 c10 c2 c1 c11 c4 c8 c9 c16 c15 c5 c6 c7 c13 c3 mw7ic2040n rev. 2 to272wb?16
mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 17 rf device data freescale semiconductor gsm edge ? 1930 - 1990 mhz z8, z9 0.0800 x 1.6274 microstrip z10 0.3419 x 0.1725 microstrip z11 0.3419 x 0.4671 microstrip z12 0.0830 x 0.4685 microstrip z13 0.0830 x 0.8565 microstrip z14 0.0830 x 0.2499 microstrip pcb rogers ro4350, 0.030 , r = 3.5 z1 0.0826 x 0.5043 microstrip z2 0.0826 x 0.3639 microstrip z3 0.0826 x 0.4258 microstrip z4 0.0826 x 0.3639 microstrip z5 0.0826 x 0.6544 microstrip z6 0.0826 x 0.6030 microstrip z7 0.0600 x 0.1273 microstrip figure 22. mw7ic2040nr1(gnr1)(nbr1) test circuit schematic ? 1930 - 1990 mhz r1 rf input v gg1 z10 rf output c5 c3 v dd2 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 dut z6 c1 v dd1 z8 quiescent current temperature compensation z1 z9 z11 z12 c11 v gg2 c12 c10 c2 z13 c6 c13 + c4 c8 c9 z7 c14 r2 c16 z14 c7 z2 z3 z4 z5 nc nc g1 g2 nc nc g2 g1 c15 table 10. mw7ic 2040nr1(gnr1)(nbr1) test circuit com ponent designations and values ? 1930 - 1990 mhz part description part number manufacturer c1, c2, c3, c4, c5 6.8 pf chip capacitors atc100b6r8ct500xt atc c6, c7, c8, c9, c10, c11 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c12 2.2 f, 16 v chip capacitor c1206c225k4rac kemet c13 470 f, 63 v electrolytic capacitor, radial mcgpr63v477m13x26 - rh multicomp c14 0.5 pf chip capacitor atc100b0r5bt500xt atc c15, c16 0.8 pf chip capacitors atc100b0r8bt500xt atc r1, r2 5.6 k , 1/4 w chip resistors crcw12065601fkea vishay
18 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 gsm edge ? 1930 - 1990 mhz figure 23. mw7ic2040nr1(gnr1)(nbr1) test circuit component layout ? 1930 - 1990 mhz cut out area c14 r1 r2 c12 c10 c2 c1 c11 c4 c8 c9 c16 c15 c5 c6 c7 c13 c3 mw7ic2040n rev. 2 to272wb?16
mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 19 rf device data freescale semiconductor package dimensions
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24 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1
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26 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1
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28 rf device data freescale semiconductor mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 product documentation, tools and software refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3263: bolt down mounting method for high power rf transistors and rfics in over - molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over - molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 feb. 2009 ? initial release of data sheet 1 nov. 2009 ? updated human body model esd from class 1c to 1b to reflect human body model actual test data, p. 2 ? fig. 13, ccdf w - cdma 3gpp, test model 1, 64 dpch, 45.2% clipping, single - carrier test signal and fig. 14, single - carrier w - cdma spectrum updated to show the undistorted input test signal, p. 9 ? added an3789, clamping of high power rf transistors and rfics in over - molded plastic packages to product documentation, application notes, p. 28 ? added electromigration mttf calculator and rf high power model availability to product software, p. 28
mw7ic2040nr1 MW7IC2040GNR1 mw7ic2040nbr1 29 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2009. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw7ic2040n rev. 1, 11/2009

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